Ahn, Jaesoo : rechercher sur Z-Library

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1

New method for determining flat-band voltage in high mobility semiconductors

Winter, Roy, Ahn, Jaesoo, McIntyre, Paul C., Eizenberg, Moshe

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2013

Langue:

english

Fichier:

PDF, 766 KB

english, 2013

2

A Self-Aligned Two-Step Reactive Ion Etching Process for Nanopatterning Magnetic Tunnel Junctions on 300 mm Wafers

Xue, Lin, Nistor, Lavinia, Ahn, Jaesoo, Germain, Jonathan, Ching, Chi, Balseanu, Mihaela, Trinh, Cong, Chen, Hao, Hassan, Sajjad, Pakala, Mahendra

Journal:

IEEE Transactions on Magnetics

Année:

2014

Langue:

english

Fichier:

PDF, 692 KB

english, 2014

3

Temperature Dependence of Critical Device Parameters in 1 Gbit Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM

Park, Chando, Kan, Jimmy, Ching, Chi, Ahn, Jaesoo, Xue, Lin, Wang, Rongjun, Bangar, Mangesh, Chen, Hao, Hassan, Sajjad, Kontos, Alex, Liang, Shurong, Kim, Sungryul, Pakala, Mahendra, Kang, Seung H.

Journal:

IEEE Transactions on Magnetics

Année:

2016

Langue:

english

Fichier:

PDF, 498 KB

english, 2016

4

III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)

Iain Thayne, Steven Bentley, Martin Holland, Wout Jansen, Xu Li, Douglas Macintyre, Stephen Thoms, Byungha Shin, Jaesoo Ahn, Paul McIntyre

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2011

5

A Distributed Model for Border Traps in MOS Devices

Yu Yuan, Lingquan Wang, Bo Yu, Byungha Shin, Jaesoo Ahn, McIntyre, P.C., Asbeck, P.M., Rodwell, M.J.W., Yuan Taur

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 137 KB

english, 2011

6

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Ahn, Jaesoo, Geppert, Irina, Gunji, Marika, Holland, Martin, Thayne, Iain, Eizenberg, Moshe, McIntyre, Paul C.

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 1013 KB

english, 2011

7

Comparison of Bulk-Oxide Trap Models: Lumped Versus Distributed Circuit

Han-Ping Chen,, Jaesoo Ahn,, McIntyre, Paul C., Taur, Yuan

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2013

8

Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics

Chen, Han-Ping, Ahn, Jaesoo, McIntyre, Paul C., Taur, Yuan

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2014

Langue:

english

Fichier:

PDF, 1.98 MB

english, 2014

9

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Mechanism of dangling bond elimination on As-rich InGaAs surface

Melitz, Wilhelm, Chagarov, Evgueni, Kent, Tyler, Droopad, Ravi, Ahn, Jaesoo, Long, Rathnait, McIntyre, Paul C., Kummel, Andrew C.

Année:

2012

Langue:

english

Fichier:

PDF, 749 KB

english, 2012

10

Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3

Ahn, Jaesoo, McIntyre, Paul C.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2013

11

Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces

Ahn, Jaesoo, Kent, Tyler, Chagarov, Evgueni, Tang, Kechao, Kummel, Andrew C., McIntyre, Paul C.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2013

12

Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Bentley, Steven J., Holland, Martin, Li, Xu, Paterson, Gary W., Zhou, Haiping, Ignatova, Olesya, Macintyre, Douglas, Thoms, Stephen, Asenov, Asen, Shin, Byungha, Ahn, Jaesoo, McIntyre, Paul C., Thayne

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 311 KB

english, 2011

13

Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion

Chen, Han-Ping, Yuan, Yu, Yu, Bo, Ahn, Jaesoo, McIntyre, Paul C., Asbeck, Peter M., Rodwell, Mark J. W., Taur, Yuan

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 917 KB

english, 2012

14

A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

Taur, Yuan, Chen, Han-Ping, Xie, Qian, Ahn, Jaesoo, McIntyre, Paul C., Lin, Dennis, Vais, Abhitosh, Veksler, Dmitry

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 2.82 MB

english, 2015

15

[ACM Press the 2014 Conference - Towson, Maryland (2014.10.05-2014.10.08)] Proceedings of the 2014 Conference on Research in Adaptive and Convergent Systems - RACS '14 - An efficient mobile social search method

Li, He, Ahn, Minje, Lim, Jongtae, Bok, Kyoungsoo, Choi, Hansuk, Yoo, Jaesoo

Année:

2014

Fichier:

PDF, 280 KB

2014

16

A Study on Practically Unlimited Endurance of STT-MRAM

Kan, Jimmy J., Park, Chando, Ching, Chi, Ahn, Jaesoo, Xie, Yuan, Pakala, Mahendra, Kang, Seung H.

Journal:

IEEE Transactions on Electron Devices

Année:

2017

Langue:

english

Fichier:

PDF, 1.82 MB

english, 2017

17

[IEEE 2018 IEEE International Memory Workshop (IMW) - Kyoto, Japan (2018.5.13-2018.5.16)] 2018 IEEE International Memory Workshop (IMW) - Materials and Processes for Emerging Memories

Pakala, Mahendra, Xue, Lin, Yu, Minrui, Frei, Michel, Nistor, Lavinia, Ahn, Jaesoo

Année:

2018

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2018

18

Magnetic assessment of OSL and radiocarbon ages of sediments beneath a lava in Jeju Island, Korea: Implication of possible resetting of OSL signals and age constraint of the late Quaternary lava

Ahn, Hyeon-Seon, Kim, Jin Cheul, Lee, Jin-Young, Lim, Jaesoo, Sohn, Young Kwan, Cho, Hyeongseong

Journal:

Quaternary Geochronology

Année:

2018

Langue:

english

Fichier:

PDF, 2.98 MB

english, 2018